SE10FJHM3/H Prezos (USD) [1056261unidades de stock]
- 1 pcs$0.03502
- 30,000 pcs$0.03173
- Número de peza:
- SE10FJHM3/H
- Fabricante:
- Vishay Semiconductor Diodes Division
- Descrición detallada:
- DIODE GEN PURP 600V 1A DO219AB. Rectifiers 1A 600V SMF Rectifier
- Prazo de entrega estándar do fabricante:
- En stock
- Vida útil:
- Un ano
- Chip De:
- Hong Kong
- RoHS:
- Forma de pago:
-
- Forma de envío:
- Categorías familiares:
- KEY Components Co, LTD é un distribuidor de compoñentes electrónicos que ofrece categorías de produtos, incluíndo: Diodos: rectificadores de ponte, Diodos - Capacitancia variable (Varicaps, Varactor, Transistores - Bipolar (BJT) - RF, Transistores - Bipolar (BJT) - Único, pre-sesgado, Transistores - FETs, MOSFETs - Arrays, Tiristores - SCRs - Módulos, Transistores - Unión programable and Transistores - IGBTs - Single ...
- Ventaxa competitiva:
- We specialize in Vishay Semiconductor Diodes Division SE10FJHM3/H electronic components. SE10FJHM3/H can be shipped within 24 hours after order. If you have any demands for SE10FJHM3/H, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SE10FJHM3/H Atributos do produto
Número de peza :
SE10FJHM3/H
Fabricante :
Vishay Semiconductor Diodes Division
Descrición :
DIODE GEN PURP 600V 1A DO219AB
Serie :
Automotive, AEC-Q101
Estado da parte :
Active
Tipo de diodo :
Standard
Tensión - Inversión CC (Vr) (Max) :
600V
Actual - Media rectificada (Io) :
1A
Tensión - Adiante (Vf) (Máx.) @ Se :
1.05V @ 1A
Velocidade :
Standard Recovery >500ns, > 200mA (Io)
Tempo de recuperación inversa (trr) :
780ns
Actual - Fuga inversa @ Vr :
5µA @ 600V
Capacitancia @ Vr, F :
7.5pF @ 4V, 1MHz
Tipo de montaxe :
Surface Mount
Paquete / Estuche :
DO-219AB
Paquete de dispositivos de provedores :
DO-219AB (SMF)
Temperatura de funcionamento: unión :
-55°C ~ 175°C
Últimas novas
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