Vishay Semiconductor Diodes Division - BAV21W-G3-18

KEY Part #: K6440022

BAV21W-G3-18 Prezos (USD) [2423462unidades de stock]

  • 1 pcs$0.01611
  • 10,000 pcs$0.01603

Número de peza:
BAV21W-G3-18
Fabricante:
Vishay Semiconductor Diodes Division
Descrición detallada:
DIODE GEN PURP 200V 250MA SOD123. Diodes - General Purpose, Power, Switching 250 Volt 200mA 50ns 1A IFSM
Prazo de entrega estándar do fabricante:
En stock
Vida útil:
Un ano
Chip De:
Hong Kong
RoHS:
Forma de pago:
Forma de envío:
Categorías familiares:
KEY Components Co, LTD é un distribuidor de compoñentes electrónicos que ofrece categorías de produtos, incluíndo: Transistores - Unión programable, Tiristores - SCRs - Módulos, Diodos - RF, Transistores - IGBTs - Single, Diodos - Rectificadores - Arrays, Módulos de controlador de enerxía, Diodos - Zener - Single and Transistores - JFETs ...
Ventaxa competitiva:
We specialize in Vishay Semiconductor Diodes Division BAV21W-G3-18 electronic components. BAV21W-G3-18 can be shipped within 24 hours after order. If you have any demands for BAV21W-G3-18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAV21W-G3-18 Atributos do produto

Número de peza : BAV21W-G3-18
Fabricante : Vishay Semiconductor Diodes Division
Descrición : DIODE GEN PURP 200V 250MA SOD123
Serie : Automotive, AEC-Q101
Estado da parte : Active
Tipo de diodo : Standard
Tensión - Inversión CC (Vr) (Max) : 200V
Actual - Media rectificada (Io) : 250mA (DC)
Tensión - Adiante (Vf) (Máx.) @ Se : 1V @ 100mA
Velocidade : Fast Recovery =< 500ns, > 200mA (Io)
Tempo de recuperación inversa (trr) : 50ns
Actual - Fuga inversa @ Vr : 100nA @ 150V
Capacitancia @ Vr, F : 1.5pF @ 0V, 1MHz
Tipo de montaxe : Surface Mount
Paquete / Estuche : SOD-123
Paquete de dispositivos de provedores : SOD-123
Temperatura de funcionamento: unión : 175°C (Max)

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