Vishay Semiconductor Diodes Division - BAS16D-G3-18

KEY Part #: K6440017

BAS16D-G3-18 Prezos (USD) [2202576unidades de stock]

  • 1 pcs$0.01679
  • 10,000 pcs$0.01553

Número de peza:
BAS16D-G3-18
Fabricante:
Vishay Semiconductor Diodes Division
Descrición detallada:
DIODE GEN PURP 75V 250MA SOD123. Diodes - General Purpose, Power, Switching 100 Volt 250mA 6ns 500mA IFSM
Prazo de entrega estándar do fabricante:
En stock
Vida útil:
Un ano
Chip De:
Hong Kong
RoHS:
Forma de pago:
Forma de envío:
Categorías familiares:
KEY Components Co, LTD é un distribuidor de compoñentes electrónicos que ofrece categorías de produtos, incluíndo: Diodos - RF, Transistores - IGBTs - Arrays, Transistores - Bipolar (BJT) - RF, Diodos - Zener - Single, Transistores - IGBTs - Módulos, Transistores - Finalidade especial, Transistores - JFETs and Transistores - FETs, MOSFETs - Single ...
Ventaxa competitiva:
We specialize in Vishay Semiconductor Diodes Division BAS16D-G3-18 electronic components. BAS16D-G3-18 can be shipped within 24 hours after order. If you have any demands for BAS16D-G3-18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAS16D-G3-18 Atributos do produto

Número de peza : BAS16D-G3-18
Fabricante : Vishay Semiconductor Diodes Division
Descrición : DIODE GEN PURP 75V 250MA SOD123
Serie : Automotive, AEC-Q101
Estado da parte : Active
Tipo de diodo : Standard
Tensión - Inversión CC (Vr) (Max) : 75V
Actual - Media rectificada (Io) : 250mA
Tensión - Adiante (Vf) (Máx.) @ Se : 1.25V @ 150mA
Velocidade : Fast Recovery =< 500ns, > 200mA (Io)
Tempo de recuperación inversa (trr) : 6ns
Actual - Fuga inversa @ Vr : 1µA @ 75V
Capacitancia @ Vr, F : 2pF @ 0V, 1MHz
Tipo de montaxe : Surface Mount
Paquete / Estuche : SOD-123
Paquete de dispositivos de provedores : SOD-123
Temperatura de funcionamento: unión : -55°C ~ 150°C

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