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Samsung Semiconductor - K4A8G165WB-BCWE

KEY Part #: K7359609

[24756unidades de stock]

    Número de peza:
    K4A8G165WB-BCWE
    Fabricante:
    Samsung Semiconductor
    Descrición detallada:
    8 Gb 512M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.
    Prazo de entrega estándar do fabricante:
    En stock
    Vida útil:
    Un ano
    Chip De:
    Hong Kong
    RoHS:
    Forma de pago:
    Forma de envío:
    Categorías familiares:
    KEY Components Co, LTD é un distribuidor de compoñentes electrónicos que ofrece categorías de produtos, incluíndo: GDDR5, DDR4, DDR3, HBM Aquabolt, SLC Nand, LPDDR4X, LPDDR3 and MODULE ...
    Ventaxa competitiva:
    We specialize in Samsung Semiconductor K4A8G165WB-BCWE electronic components. K4A8G165WB-BCWE can be shipped within 24 hours after order. If you have any demands for K4A8G165WB-BCWE, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4A8G165WB-BCWE Atributos do produto

    Número de peza : K4A8G165WB-BCWE
    Fabricante : Samsung Semiconductor
    Descrición : 8 Gb 512M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production
    Serie : DDR4
    densidade : 8 Gb
    Org. : 512M x 16
    velocidade : 3200 Mbps
    Voltaxe : 1.2 V
    Temp. : 0 ~ 85 °C
    paquete : 96FBGA
    estado do produto : Mass Production

    Últimas novas

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    Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering
    High Bandwidth Memory is Catching on for Data-intensive Computing
    Inside the building blocks of the 5G future
    Samsung’s PM1733 SSD and High Density DIMMs Support AMD EPYC™ 7002 Series Processor
    Unlocking the Power of Cloud Computing
    Mass Production of Fifth-Generation V-NAND has Started
    Samsung Begins Mass Production of Industry’s First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Samsung Memory Solutions for Automotive
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