Samsung Semiconductor - K4B1G0846I-BYNB

KEY Part #: K7359638

[21953unidades de stock]


    Número de peza:
    K4B1G0846I-BYNB
    Fabricante:
    Samsung Semiconductor
    Descrición detallada:
    1 Gb 128M x 8 2133 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.
    Prazo de entrega estándar do fabricante:
    En stock
    Vida útil:
    Un ano
    Chip De:
    Hong Kong
    RoHS:
    Forma de pago:
    Forma de envío:
    Categorías familiares:
    KEY Components Co, LTD é un distribuidor de compoñentes electrónicos que ofrece categorías de produtos, incluíndo: LPDDR5, LPDDR4X, LPDDR4, GDDR6, MODULE, SLC Nand, HBM Flarebolt and LPDDR3 ...
    Ventaxa competitiva:
    We specialize in Samsung Semiconductor K4B1G0846I-BYNB electronic components. K4B1G0846I-BYNB can be shipped within 24 hours after order. If you have any demands for K4B1G0846I-BYNB, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B1G0846I-BYNB Atributos do produto

    Número de peza : K4B1G0846I-BYNB
    Fabricante : Samsung Semiconductor
    Descrición : 1 Gb 128M x 8 2133 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production
    Serie : DDR3
    densidade : 1 Gb
    Org. : 128M x 8
    velocidade : 2133 Mbps
    Voltaxe : 1.35 V
    Temp. : 0 ~ 85 °C
    paquete : 78FBGA
    estado do produto : Mass Production

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