Se a túa situación non aparece na lista, seleccione unha das seguintes:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski

Se a túa situación non aparece na lista, seleccione unha das seguintes:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Inicio
  2. Produtos
  3. DRAM
  4. DDR3
  5. K4B4G1646E-BYMA

Samsung Semiconductor - K4B4G1646E-BYMA

KEY Part #: K7359703

[19442unidades de stock]

    Número de peza:
    K4B4G1646E-BYMA
    Fabricante:
    Samsung Semiconductor
    Descrición detallada:
    4 Gb 512M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.
    Prazo de entrega estándar do fabricante:
    En stock
    Vida útil:
    Un ano
    Chip De:
    Hong Kong
    RoHS:
    Forma de pago:
    Forma de envío:
    Categorías familiares:
    KEY Components Co, LTD é un distribuidor de compoñentes electrónicos que ofrece categorías de produtos, incluíndo: DDR4, GDDR6, LPDDR5, MODULE, SLC Nand, HBM Flarebolt, HBM Aquabolt and LPDDR4X ...
    Ventaxa competitiva:
    We specialize in Samsung Semiconductor K4B4G1646E-BYMA electronic components. K4B4G1646E-BYMA can be shipped within 24 hours after order. If you have any demands for K4B4G1646E-BYMA, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B4G1646E-BYMA Atributos do produto

    Número de peza : K4B4G1646E-BYMA
    Fabricante : Samsung Semiconductor
    Descrición : 4 Gb 512M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production
    Serie : DDR3
    densidade : 4 Gb
    Org. : 512M x 8
    velocidade : 1866 Mbps
    Voltaxe : 1.35 V
    Temp. : 0 ~ 85 °C
    paquete : 96FBGA
    estado do produto : Mass Production

    Últimas novas

    Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time
    Samsung Enhances Functional Safety to its Automotive Semiconductors with ISO 26262 Certification
    Inside the building blocks of the 5G future
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    High Bandwidth Memory is Catching on for Data-intensive Computing
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Driving the Artificial Intelligence Evolution with In-Memory Computing
    Mission Peak Reference Server System for NGSFF SSD
    Evolving Mobile Solutions: Samsung at MWC 2018
    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    Tamén pode estar interesado
    • M378A1K43BB1-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CTD

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43CB2-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    • M378A1K43CB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    • M378A1K43CB2-CTD

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    Pezas quentes