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  5. K4B1G0846I-BYK0

Samsung Semiconductor - K4B1G0846I-BYK0

KEY Part #: K7359636

[17047unidades de stock]

    Número de peza:
    K4B1G0846I-BYK0
    Fabricante:
    Samsung Semiconductor
    Descrición detallada:
    1 Gb 128M x 8 1600 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.
    Prazo de entrega estándar do fabricante:
    En stock
    Vida útil:
    Un ano
    Chip De:
    Hong Kong
    RoHS:
    Forma de pago:
    Forma de envío:
    Categorías familiares:
    KEY Components Co, LTD é un distribuidor de compoñentes electrónicos que ofrece categorías de produtos, incluíndo: DDR4, HBM Aquabolt, LPDDR4, GDDR6, LPDDR4X, HBM Flarebolt, SLC Nand and LPDDR3 ...
    Ventaxa competitiva:
    We specialize in Samsung Semiconductor K4B1G0846I-BYK0 electronic components. K4B1G0846I-BYK0 can be shipped within 24 hours after order. If you have any demands for K4B1G0846I-BYK0, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B1G0846I-BYK0 Atributos do produto

    Número de peza : K4B1G0846I-BYK0
    Fabricante : Samsung Semiconductor
    Descrición : 1 Gb 128M x 8 1600 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production
    Serie : DDR3
    densidade : 1 Gb
    Org. : 128M x 8
    velocidade : 1600 Mbps
    Voltaxe : 1.35 V
    Temp. : 0 ~ 85 °C
    paquete : 78FBGA
    estado do produto : Mass Production

    Últimas novas

    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Automotive Driven by Small Packages Under the Hood
    Evolving Mobile Solutions: Samsung at MWC 2018
    Samsung’s PM1733 SSD and High Density DIMMs Support AMD EPYC™ 7002 Series Processor
    How Will 5G Impact on Memory?
    5G and Memory - from Connected Thinking to Connected Living
    Samsung Rolls Out Industry’s First 8GB LPDDR4 DRAM Package
    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
    SSDs, DRAM and gaming: Unlocking a new level of performance
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
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