1SS352,H3F Prezos (USD) [3056256unidades de stock]
- 1 pcs$0.01277
- 3,000 pcs$0.01271
- 6,000 pcs$0.01146
- 15,000 pcs$0.00997
- 30,000 pcs$0.00897
- 75,000 pcs$0.00797
- 150,000 pcs$0.00664
- Número de peza:
- 1SS352,H3F
- Fabricante:
- Toshiba Semiconductor and Storage
- Descrición detallada:
- DIODE GEN PURP 80V 100MA SC76-2. Diodes - General Purpose, Power, Switching 0.1A 80V Switching High-Speed Diode
- Prazo de entrega estándar do fabricante:
- En stock
- Vida útil:
- Un ano
- Chip De:
- Hong Kong
- RoHS:
- Forma de pago:
-
- Forma de envío:
- Categorías familiares:
- KEY Components Co, LTD é un distribuidor de compoñentes electrónicos que ofrece categorías de produtos, incluíndo: Transistores - Bipolar (BJT) - RF, Tiristores: SCRs, Tiristores: TRIAC, Transistores - Bipolar (BJT) - Arrays, previos, Diodos - Rectificadores - Arrays, Transistores - IGBTs - Arrays, Transistores - FETs, MOSFETs - Arrays and Transistores - Bipolar (BJT) - Único, pre-sesgado ...
- Ventaxa competitiva:
- We specialize in Toshiba Semiconductor and Storage 1SS352,H3F electronic components. 1SS352,H3F can be shipped within 24 hours after order. If you have any demands for 1SS352,H3F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
1SS352,H3F Atributos do produto
Número de peza :
1SS352,H3F
Fabricante :
Toshiba Semiconductor and Storage
Descrición :
DIODE GEN PURP 80V 100MA SC76-2
Serie :
-
Estado da parte :
Active
Tipo de diodo :
Standard
Tensión - Inversión CC (Vr) (Max) :
80V
Actual - Media rectificada (Io) :
100mA
Tensión - Adiante (Vf) (Máx.) @ Se :
1.2V @ 100mA
Velocidade :
Small Signal =< 200mA (Io), Any Speed
Tempo de recuperación inversa (trr) :
4ns
Actual - Fuga inversa @ Vr :
500nA @ 80V
Capacitancia @ Vr, F :
3pF @ 0V, 1MHz
Tipo de montaxe :
Surface Mount
Paquete / Estuche :
SC-76A
Paquete de dispositivos de provedores :
SC-76-2
Temperatura de funcionamento: unión :
125°C (Max)
Últimas novas
Tamén pode estar interesado
-
1SS250(TE85L,F)
Toshiba Semiconductor and Storage
DIODE GEN PURP 200V 100MA SC59. Diodes - General Purpose, Power, Switching 0.1A 200V Switching Diode S-Mini High
-
SE20AFGHM3/6B
Vishay Semiconductor Diodes Division
DIODE GEN PURP 400V 1.3A DO221AC. Rectifiers 2 Amp 400 volts ESD PROTECTION 13in
-
SE20AFDHM3/6B
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 1.3A DO221AC. Rectifiers 2 Amp 200 volts ESD PROTECTION 13in
-
SE20AFBHM3/6B
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 1.3A DO221AC. Rectifiers 2 Amp 100 volts ESD PROTECTION 13in
-
SE20AFB-M3/6A
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 1.3A DO221AC. Rectifiers 2 Amp 100 Volts ESD PROTECTION
-
SE20AFD-M3/6B
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 1.3A DO221AC. Rectifiers 2 Amp 200 volts ESD PROTECTION 13in
Pezas quentes
- MBRB10H50HE3/45
- MBRB16H35-E3/81
- GP10KE-M3/73
- 1N4005-N-0-2-BP
- 1N4003 BK
- IRD3CH31DB6
- SS310HE-TP
- CLL914 BK
- JANTX1N6761UR-1
- GP10-4003E-M3/54
- EGP10F-M3/54
- VS-30WQ06FNTRLPBF
- UH1B-E3/61T
- MBRF7H60HE3/45
- RGP15DHE3/54
- RB420D-TP
- VS-90SQ045TR
- DGP20HE3/54
- 1N5622GP-E3/73
- U1GWJ49(TE12L,F)
- STTH3R04
- 2A02-T
- STTH10R04G
- FFPF04U150STU
- VS-20L15TPBF
- MBR2515L
- MBR845RL
- B280-13
- 60CPF10
- 40EPS08
- MA3X72100L
- MA2J11600L
- DL4001
- IDD15E60BUMA1
- 2A01-TP
- IDW30E60AFKSA1
- RGP02-14E-E3/73
- HS5M M6G
- GL41DHE3/97
- SE15PD-M3/85A