SE20AFGHM3/6B Prezos (USD) [914813unidades de stock]
- 1 pcs$0.04267
- 14,000 pcs$0.04245
- Número de peza:
- SE20AFGHM3/6B
- Fabricante:
- Vishay Semiconductor Diodes Division
- Descrición detallada:
- DIODE GEN PURP 400V 1.3A DO221AC. Rectifiers 2 Amp 400 volts ESD PROTECTION 13in
- Prazo de entrega estándar do fabricante:
- En stock
- Vida útil:
- Un ano
- Chip De:
- Hong Kong
- RoHS:
- Forma de pago:
-
- Forma de envío:
- Categorías familiares:
- KEY Components Co, LTD é un distribuidor de compoñentes electrónicos que ofrece categorías de produtos, incluíndo: Transistores - Bipolar (BJT) - Arrays, Diodos - RF, Transistores - Bipolar (BJT) - RF, Transistores - IGBTs - Single, Transistores - Finalidade especial, Transistores - Bipolar (BJT) - Arrays, previos, Transistores - IGBTs - Arrays and Diodos - Zener - Arrays ...
- Ventaxa competitiva:
- We specialize in Vishay Semiconductor Diodes Division SE20AFGHM3/6B electronic components. SE20AFGHM3/6B can be shipped within 24 hours after order. If you have any demands for SE20AFGHM3/6B, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SE20AFGHM3/6B Atributos do produto
Número de peza :
SE20AFGHM3/6B
Fabricante :
Vishay Semiconductor Diodes Division
Descrición :
DIODE GEN PURP 400V 1.3A DO221AC
Serie :
Automotive, AEC-Q101
Estado da parte :
Active
Tipo de diodo :
Standard
Tensión - Inversión CC (Vr) (Max) :
400V
Actual - Media rectificada (Io) :
1.3A (DC)
Tensión - Adiante (Vf) (Máx.) @ Se :
1.1V @ 2A
Velocidade :
Standard Recovery >500ns, > 200mA (Io)
Tempo de recuperación inversa (trr) :
1.2µs
Actual - Fuga inversa @ Vr :
5µA @ 400V
Capacitancia @ Vr, F :
12pF @ 4V, 1MHz
Tipo de montaxe :
Surface Mount
Paquete / Estuche :
DO-221AC, SMA Flat Leads
Paquete de dispositivos de provedores :
DO-221AC (SlimSMA)
Temperatura de funcionamento: unión :
-55°C ~ 175°C
Últimas novas
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Vishay Semiconductor Diodes Division
DIODE GEN PURP 400V 1.3A DO221AC. Rectifiers 2 Amp 400 volts ESD PROTECTION 13in
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