Samsung Semiconductor - K4B4G1646D-BYNB

KEY Part #: K7359698

[21068unidades de stock]


    Número de peza:
    K4B4G1646D-BYNB
    Fabricante:
    Samsung Semiconductor
    Descrición detallada:
    4 Gb 256M x 16 2133 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.
    Prazo de entrega estándar do fabricante:
    En stock
    Vida útil:
    Un ano
    Chip De:
    Hong Kong
    RoHS:
    Forma de pago:
    Forma de envío:
    Categorías familiares:
    KEY Components Co, LTD é un distribuidor de compoñentes electrónicos que ofrece categorías de produtos, incluíndo: DDR3, SLC Nand, HBM Flarebolt, HBM Aquabolt, LPDDR4, LPDDR4X, GDDR6 and DDR4 ...
    Ventaxa competitiva:
    We specialize in Samsung Semiconductor K4B4G1646D-BYNB electronic components. K4B4G1646D-BYNB can be shipped within 24 hours after order. If you have any demands for K4B4G1646D-BYNB, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B4G1646D-BYNB Atributos do produto

    Número de peza : K4B4G1646D-BYNB
    Fabricante : Samsung Semiconductor
    Descrición : 4 Gb 256M x 16 2133 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production
    Serie : DDR3
    densidade : 4 Gb
    Org. : 256M x 16
    velocidade : 2133 Mbps
    Voltaxe : 1.35 V
    Temp. : 0 ~ 85 °C
    paquete : 96FBGA
    estado do produto : Mass Production

    Tamén pode estar interesado
    • M378A1K43BB1-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CTD

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43CB2-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    • M378A1K43CB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    • M378A1K43CB2-CTD

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.