Vishay Semiconductor Diodes Division - SE10FGHM3/I

KEY Part #: K6440114

SE10FGHM3/I Prezos (USD) [1223781unidades de stock]

  • 1 pcs$0.03189
  • 30,000 pcs$0.03173

Número de peza:
SE10FGHM3/I
Fabricante:
Vishay Semiconductor Diodes Division
Descrición detallada:
DIODE GEN PURP 400V 1A DO219AB. Rectifiers 1A 400V ESD Prot SMF Rectifier
Prazo de entrega estándar do fabricante:
En stock
Vida útil:
Un ano
Chip De:
Hong Kong
RoHS:
Forma de pago:
Forma de envío:
Categorías familiares:
KEY Components Co, LTD é un distribuidor de compoñentes electrónicos que ofrece categorías de produtos, incluíndo: Diodos - Rectificadores - Arrays, Tiristores: SCRs, Módulos de controlador de enerxía, Transistores - Bipolar (BJT) - Único, pre-sesgado, Transistores - Bipolar (BJT) - Arrays, previos, Transistores - FETs, MOSFETs - Single, Transistores - IGBTs - Single and Transistores - IGBTs - Arrays ...
Ventaxa competitiva:
We specialize in Vishay Semiconductor Diodes Division SE10FGHM3/I electronic components. SE10FGHM3/I can be shipped within 24 hours after order. If you have any demands for SE10FGHM3/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SE10FGHM3/I Atributos do produto

Número de peza : SE10FGHM3/I
Fabricante : Vishay Semiconductor Diodes Division
Descrición : DIODE GEN PURP 400V 1A DO219AB
Serie : Automotive, AEC-Q101
Estado da parte : Active
Tipo de diodo : Standard
Tensión - Inversión CC (Vr) (Max) : 400V
Actual - Media rectificada (Io) : 1A
Tensión - Adiante (Vf) (Máx.) @ Se : 1.05V @ 1A
Velocidade : Standard Recovery >500ns, > 200mA (Io)
Tempo de recuperación inversa (trr) : 780ns
Actual - Fuga inversa @ Vr : 5µA @ 400V
Capacitancia @ Vr, F : 7.5pF @ 4V, 1MHz
Tipo de montaxe : Surface Mount
Paquete / Estuche : DO-219AB
Paquete de dispositivos de provedores : DO-219AB (SMF)
Temperatura de funcionamento: unión : -55°C ~ 175°C

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