Vishay Semiconductor Diodes Division - GP10M-4007EHE3/54

KEY Part #: K6434186

GP10M-4007EHE3/54 Prezos (USD) [762568unidades de stock]

  • 1 pcs$0.04850
  • 11,000 pcs$0.04396

Número de peza:
GP10M-4007EHE3/54
Fabricante:
Vishay Semiconductor Diodes Division
Descrición detallada:
DIODE GEN PURP 1KV 1A DO204AL.
Prazo de entrega estándar do fabricante:
En stock
Vida útil:
Un ano
Chip De:
Hong Kong
RoHS:
Forma de pago:
Forma de envío:
Categorías familiares:
KEY Components Co, LTD é un distribuidor de compoñentes electrónicos que ofrece categorías de produtos, incluíndo: Transistores - IGBTs - Módulos, Tiristores: DIACs, SIDACs, Transistores - Bipolar (BJT) - Arrays, Transistores - Bipolar (BJT) - Arrays, previos, Transistores - Unión programable, Diodos - RF, Transistores - Bipolar (BJT) - Único, pre-sesgado and Transistores - Bipolar (BJT) - Individual ...
Ventaxa competitiva:
We specialize in Vishay Semiconductor Diodes Division GP10M-4007EHE3/54 electronic components. GP10M-4007EHE3/54 can be shipped within 24 hours after order. If you have any demands for GP10M-4007EHE3/54, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GP10M-4007EHE3/54 Atributos do produto

Número de peza : GP10M-4007EHE3/54
Fabricante : Vishay Semiconductor Diodes Division
Descrición : DIODE GEN PURP 1KV 1A DO204AL
Serie : -
Estado da parte : Active
Tipo de diodo : Standard
Tensión - Inversión CC (Vr) (Max) : 1000V
Actual - Media rectificada (Io) : 1A
Tensión - Adiante (Vf) (Máx.) @ Se : -
Velocidade : Standard Recovery >500ns, > 200mA (Io)
Tempo de recuperación inversa (trr) : -
Actual - Fuga inversa @ Vr : -
Capacitancia @ Vr, F : -
Tipo de montaxe : Through Hole
Paquete / Estuche : DO-204AL, DO-41, Axial
Paquete de dispositivos de provedores : DO-204AL (DO-41)
Temperatura de funcionamento: unión : -

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