Vishay Semiconductor Diodes Division - VS-HFA04SD60SHM3

KEY Part #: K6434175

VS-HFA04SD60SHM3 Prezos (USD) [114936unidades de stock]

  • 1 pcs$0.32746
  • 3,000 pcs$0.32583

Número de peza:
VS-HFA04SD60SHM3
Fabricante:
Vishay Semiconductor Diodes Division
Descrición detallada:
DIODE GEN PURP 600V 4A TO252. Diodes - General Purpose, Power, Switching 4 Amp 600 Volt
Prazo de entrega estándar do fabricante:
En stock
Vida útil:
Un ano
Chip De:
Hong Kong
RoHS:
Forma de pago:
Forma de envío:
Categorías familiares:
KEY Components Co, LTD é un distribuidor de compoñentes electrónicos que ofrece categorías de produtos, incluíndo: Transistores - FETs, MOSFETs - Arrays, Transistores - IGBTs - Módulos, Transistores - Bipolar (BJT) - Arrays, previos, Módulos de controlador de enerxía, Transistores - Bipolar (BJT) - Individual, Transistores - IGBTs - Arrays, Diodos - Rectificadores - Arrays and Diodos - RF ...
Ventaxa competitiva:
We specialize in Vishay Semiconductor Diodes Division VS-HFA04SD60SHM3 electronic components. VS-HFA04SD60SHM3 can be shipped within 24 hours after order. If you have any demands for VS-HFA04SD60SHM3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-HFA04SD60SHM3 Atributos do produto

Número de peza : VS-HFA04SD60SHM3
Fabricante : Vishay Semiconductor Diodes Division
Descrición : DIODE GEN PURP 600V 4A TO252
Serie : Automotive, AEC-Q101
Estado da parte : Active
Tipo de diodo : Standard
Tensión - Inversión CC (Vr) (Max) : 600V
Actual - Media rectificada (Io) : 4A
Tensión - Adiante (Vf) (Máx.) @ Se : 1.8V @ 4A
Velocidade : Fast Recovery =< 500ns, > 200mA (Io)
Tempo de recuperación inversa (trr) : 42ns
Actual - Fuga inversa @ Vr : 3µA @ 600V
Capacitancia @ Vr, F : -
Tipo de montaxe : Surface Mount
Paquete / Estuche : TO-252-3, DPak (2 Leads + Tab), SC-63
Paquete de dispositivos de provedores : TO-252, (D-Pak)
Temperatura de funcionamento: unión : -65°C ~ 175°C

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