BAS16LT1G Prezos (USD) [4680751unidades de stock]
- 1 pcs$0.00790
- 3,000 pcs$0.00788
- 6,000 pcs$0.00710
- 15,000 pcs$0.00618
- 30,000 pcs$0.00556
- 75,000 pcs$0.00494
- 150,000 pcs$0.00411
- Número de peza:
- BAS16LT1G
- Fabricante:
- ON Semiconductor
- Descrición detallada:
- DIODE GEN PURP 75V 200MA SOT23-3. Diodes - General Purpose, Power, Switching 75V 200mA
- Prazo de entrega estándar do fabricante:
- En stock
- Vida útil:
- Un ano
- Chip De:
- Hong Kong
- RoHS:
- Forma de pago:
-
- Forma de envío:
- Categorías familiares:
- KEY Components Co, LTD é un distribuidor de compoñentes electrónicos que ofrece categorías de produtos, incluíndo: Transistores - Bipolar (BJT) - Individual, Diodos - Zener - Arrays, Transistores - IGBTs - Módulos, Transistores - Bipolar (BJT) - Arrays, Transistores - Bipolar (BJT) - RF, Diodos - Capacitancia variable (Varicaps, Varactor, Transistores - Finalidade especial and Diodos - RF ...
- Ventaxa competitiva:
- We specialize in ON Semiconductor BAS16LT1G electronic components. BAS16LT1G can be shipped within 24 hours after order. If you have any demands for BAS16LT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BAS16LT1G Atributos do produto
Número de peza :
BAS16LT1G
Fabricante :
ON Semiconductor
Descrición :
DIODE GEN PURP 75V 200MA SOT23-3
Serie :
-
Estado da parte :
Active
Tipo de diodo :
Standard
Tensión - Inversión CC (Vr) (Max) :
100V
Actual - Media rectificada (Io) :
200mA (DC)
Tensión - Adiante (Vf) (Máx.) @ Se :
1.25V @ 150mA
Velocidade :
Small Signal =< 200mA (Io), Any Speed
Tempo de recuperación inversa (trr) :
6ns
Actual - Fuga inversa @ Vr :
1µA @ 100V
Capacitancia @ Vr, F :
2pF @ 0V, 1MHz
Tipo de montaxe :
Surface Mount
Paquete / Estuche :
TO-236-3, SC-59, SOT-23-3
Paquete de dispositivos de provedores :
SOT-23-3 (TO-236)
Temperatura de funcionamento: unión :
-55°C ~ 150°C
Últimas novas
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