Vishay Semiconductor Diodes Division - LS4448GS08

KEY Part #: K6458653

LS4448GS08 Prezos (USD) [3577712unidades de stock]

  • 1 pcs$0.01034
  • 2,500 pcs$0.00995
  • 5,000 pcs$0.00898
  • 12,500 pcs$0.00781
  • 25,000 pcs$0.00703
  • 62,500 pcs$0.00624
  • 125,000 pcs$0.00520

Número de peza:
LS4448GS08
Fabricante:
Vishay Semiconductor Diodes Division
Descrición detallada:
DIODE GEN PURP 100V 300MA SOD80. Diodes - General Purpose, Power, Switching 100V Io/150mA 2.0 Amp IFSM
Prazo de entrega estándar do fabricante:
En stock
Vida útil:
Un ano
Chip De:
Hong Kong
RoHS:
Forma de pago:
Forma de envío:
Categorías familiares:
KEY Components Co, LTD é un distribuidor de compoñentes electrónicos que ofrece categorías de produtos, incluíndo: Transistores - Unión programable, Transistores - JFETs, Tiristores: TRIAC, Transistores - FETs, MOSFETs - Single, Transistores - Bipolar (BJT) - Arrays, Tiristores: DIACs, SIDACs, Tiristores: SCRs and Transistores - IGBTs - Módulos ...
Ventaxa competitiva:
We specialize in Vishay Semiconductor Diodes Division LS4448GS08 electronic components. LS4448GS08 can be shipped within 24 hours after order. If you have any demands for LS4448GS08, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

LS4448GS08 Atributos do produto

Número de peza : LS4448GS08
Fabricante : Vishay Semiconductor Diodes Division
Descrición : DIODE GEN PURP 100V 300MA SOD80
Serie : Automotive, AEC-Q101
Estado da parte : Active
Tipo de diodo : Standard
Tensión - Inversión CC (Vr) (Max) : 75V
Actual - Media rectificada (Io) : 150mA
Tensión - Adiante (Vf) (Máx.) @ Se : 1V @ 100mA
Velocidade : Small Signal =< 200mA (Io), Any Speed
Tempo de recuperación inversa (trr) : 8ns
Actual - Fuga inversa @ Vr : 25nA @ 20V
Capacitancia @ Vr, F : 4pF @ 0V, 1MHz
Tipo de montaxe : Surface Mount
Paquete / Estuche : SOD-80 Variant
Paquete de dispositivos de provedores : SOD-80 QuadroMELF
Temperatura de funcionamento: unión : 175°C (Max)

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