1N6483-E3/97 Prezos (USD) [1025340unidades de stock]
- 1 pcs$0.03807
- 10,000 pcs$0.03788
- Número de peza:
- 1N6483-E3/97
- Fabricante:
- Vishay Semiconductor Diodes Division
- Descrición detallada:
- DIODE GEN PURP 800V 1A DO213AB. Rectifiers 800 Volt 1.0 Amp 30 Amp IFSM
- Prazo de entrega estándar do fabricante:
- En stock
- Vida útil:
- Un ano
- Chip De:
- Hong Kong
- RoHS:
- Forma de pago:
-
- Forma de envío:
- Categorías familiares:
- KEY Components Co, LTD é un distribuidor de compoñentes electrónicos que ofrece categorías de produtos, incluíndo: Diodos - Rectificadores - Arrays, Diodos - Zener - Single, Transistores - Finalidade especial, Transistores - FETs, MOSFETs - Arrays, Diodos - Capacitancia variable (Varicaps, Varactor, Transistores - Bipolar (BJT) - Individual, Diodos - Zener - Arrays and Transistores - IGBTs - Arrays ...
- Ventaxa competitiva:
- We specialize in Vishay Semiconductor Diodes Division 1N6483-E3/97 electronic components. 1N6483-E3/97 can be shipped within 24 hours after order. If you have any demands for 1N6483-E3/97, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
1N6483-E3/97 Atributos do produto
Número de peza :
1N6483-E3/97
Fabricante :
Vishay Semiconductor Diodes Division
Descrición :
DIODE GEN PURP 800V 1A DO213AB
Serie :
SUPERECTIFIER®
Estado da parte :
Active
Tipo de diodo :
Standard
Tensión - Inversión CC (Vr) (Max) :
800V
Actual - Media rectificada (Io) :
1A
Tensión - Adiante (Vf) (Máx.) @ Se :
1.1V @ 1A
Velocidade :
Standard Recovery >500ns, > 200mA (Io)
Tempo de recuperación inversa (trr) :
-
Actual - Fuga inversa @ Vr :
10µA @ 800V
Capacitancia @ Vr, F :
8pF @ 4V, 1MHz
Tipo de montaxe :
Surface Mount
Paquete / Estuche :
DO-213AB, MELF (Glass)
Paquete de dispositivos de provedores :
DO-213AB
Temperatura de funcionamento: unión :
-65°C ~ 175°C
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