Vishay Semiconductor Diodes Division - IMBD4148-HE3-18

KEY Part #: K6458595

IMBD4148-HE3-18 Prezos (USD) [2853002unidades de stock]

  • 1 pcs$0.01296
  • 10,000 pcs$0.01221

Número de peza:
IMBD4148-HE3-18
Fabricante:
Vishay Semiconductor Diodes Division
Descrición detallada:
DIODE GEN PURP 75V 150MA SOT23. Diodes - General Purpose, Power, Switching 100V 150mA 4ns 500mA IFSM
Prazo de entrega estándar do fabricante:
En stock
Vida útil:
Un ano
Chip De:
Hong Kong
RoHS:
Forma de pago:
Forma de envío:
Categorías familiares:
KEY Components Co, LTD é un distribuidor de compoñentes electrónicos que ofrece categorías de produtos, incluíndo: Módulos de controlador de enerxía, Diodos - Capacitancia variable (Varicaps, Varactor, Transistores - IGBTs - Arrays, Transistores - JFETs, Transistores - Bipolar (BJT) - Arrays, previos, Diodos - RF, Transistores - Unión programable and Transistores - FETs, MOSFETs - RF ...
Ventaxa competitiva:
We specialize in Vishay Semiconductor Diodes Division IMBD4148-HE3-18 electronic components. IMBD4148-HE3-18 can be shipped within 24 hours after order. If you have any demands for IMBD4148-HE3-18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IMBD4148-HE3-18 Atributos do produto

Número de peza : IMBD4148-HE3-18
Fabricante : Vishay Semiconductor Diodes Division
Descrición : DIODE GEN PURP 75V 150MA SOT23
Serie : Automotive, AEC-Q101
Estado da parte : Active
Tipo de diodo : Standard
Tensión - Inversión CC (Vr) (Max) : 75V
Actual - Media rectificada (Io) : 150mA
Tensión - Adiante (Vf) (Máx.) @ Se : 1V @ 10mA
Velocidade : Small Signal =< 200mA (Io), Any Speed
Tempo de recuperación inversa (trr) : 4ns
Actual - Fuga inversa @ Vr : 2.5µA @ 70V
Capacitancia @ Vr, F : -
Tipo de montaxe : Surface Mount
Paquete / Estuche : TO-236-3, SC-59, SOT-23-3
Paquete de dispositivos de provedores : SOT-23
Temperatura de funcionamento: unión : 150°C (Max)

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