Vishay Semiconductor Diodes Division - LS4448GS18

KEY Part #: K6458685

LS4448GS18 Prezos (USD) [4461899unidades de stock]

  • 1 pcs$0.00829
  • 10,000 pcs$0.00781

Número de peza:
LS4448GS18
Fabricante:
Vishay Semiconductor Diodes Division
Descrición detallada:
DIODE GEN PURP 75V 150MA SOD80. Diodes - General Purpose, Power, Switching 100V Io/150mA 2.0 Amp IFSM
Prazo de entrega estándar do fabricante:
En stock
Vida útil:
Un ano
Chip De:
Hong Kong
RoHS:
Forma de pago:
Forma de envío:
Categorías familiares:
KEY Components Co, LTD é un distribuidor de compoñentes electrónicos que ofrece categorías de produtos, incluíndo: Tiristores: SCRs, Tiristores - SCRs - Módulos, Transistores - Bipolar (BJT) - Único, pre-sesgado, Transistores - Bipolar (BJT) - Arrays, previos, Transistores - IGBTs - Arrays, Transistores - FETs, MOSFETs - Single, Diodos - Zener - Single and Transistores - FETs, MOSFETs - Arrays ...
Ventaxa competitiva:
We specialize in Vishay Semiconductor Diodes Division LS4448GS18 electronic components. LS4448GS18 can be shipped within 24 hours after order. If you have any demands for LS4448GS18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

LS4448GS18 Atributos do produto

Número de peza : LS4448GS18
Fabricante : Vishay Semiconductor Diodes Division
Descrición : DIODE GEN PURP 75V 150MA SOD80
Serie : Automotive, AEC-Q101
Estado da parte : Active
Tipo de diodo : Standard
Tensión - Inversión CC (Vr) (Max) : 75V
Actual - Media rectificada (Io) : 150mA
Tensión - Adiante (Vf) (Máx.) @ Se : 1V @ 100mA
Velocidade : Small Signal =< 200mA (Io), Any Speed
Tempo de recuperación inversa (trr) : 8ns
Actual - Fuga inversa @ Vr : 25nA @ 20V
Capacitancia @ Vr, F : 4pF @ 0V, 1MHz
Tipo de montaxe : Surface Mount
Paquete / Estuche : SOD-80 Variant
Paquete de dispositivos de provedores : SOD-80 QuadroMELF
Temperatura de funcionamento: unión : 175°C (Max)

Tamén pode estar interesado
  • BAT54T

    ON Semiconductor

    DIODE SCHOTTKY 30V 200MA SOT523. Schottky Diodes & Rectifiers 0.2A,30V,Surf Mt SCHOTTKY Barr DIODE

  • BAS21E6433HTMA1

    Infineon Technologies

    DIODE GEN PURP 200V 250MA SOT23. Diodes - General Purpose, Power, Switching Silicon Switch Diode

  • BAS116E6433HTMA1

    Infineon Technologies

    DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode

  • BAR74E6327HTSA1

    Infineon Technologies

    DIODE GEN PURP 50V 250MA SOT23-3.

  • BAL99E6327HTSA1

    Infineon Technologies

    DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Tuning Diode

  • BAL99E6433HTMA1

    Infineon Technologies

    DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Tuning Diode