FESB16DT-E3/81 Prezos (USD) [84873unidades de stock]
- 1 pcs$0.46070
- 800 pcs$0.42754
- Número de peza:
- FESB16DT-E3/81
- Fabricante:
- Vishay Semiconductor Diodes Division
- Descrición detallada:
- DIODE GEN PURP 200V 16A TO263AB. Rectifiers 16 Amp 200 Volt 35ns
- Prazo de entrega estándar do fabricante:
- En stock
- Vida útil:
- Un ano
- Chip De:
- Hong Kong
- RoHS:
- Forma de pago:
-
- Forma de envío:
- Categorías familiares:
- KEY Components Co, LTD é un distribuidor de compoñentes electrónicos que ofrece categorías de produtos, incluíndo: Transistores - IGBTs - Arrays, Transistores - Bipolar (BJT) - Arrays, previos, Diodos - Rectificadores - Solteiros, Transistores - Unión programable, Transistores - FETs, MOSFETs - RF, Transistores - IGBTs - Módulos, Tiristores: TRIAC and Diodos - Zener - Single ...
- Ventaxa competitiva:
- We specialize in Vishay Semiconductor Diodes Division FESB16DT-E3/81 electronic components. FESB16DT-E3/81 can be shipped within 24 hours after order. If you have any demands for FESB16DT-E3/81, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FESB16DT-E3/81 Atributos do produto
Número de peza :
FESB16DT-E3/81
Fabricante :
Vishay Semiconductor Diodes Division
Descrición :
DIODE GEN PURP 200V 16A TO263AB
Serie :
-
Estado da parte :
Active
Tipo de diodo :
Standard
Tensión - Inversión CC (Vr) (Max) :
200V
Actual - Media rectificada (Io) :
16A
Tensión - Adiante (Vf) (Máx.) @ Se :
975mV @ 16A
Velocidade :
Fast Recovery =< 500ns, > 200mA (Io)
Tempo de recuperación inversa (trr) :
35ns
Actual - Fuga inversa @ Vr :
10µA @ 200V
Capacitancia @ Vr, F :
175pF @ 4V, 1MHz
Tipo de montaxe :
Surface Mount
Paquete / Estuche :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Paquete de dispositivos de provedores :
TO-263AB
Temperatura de funcionamento: unión :
-65°C ~ 150°C
Últimas novas
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