Toshiba Semiconductor and Storage - 1SS427,L3M

KEY Part #: K6455928

1SS427,L3M Prezos (USD) [2750629unidades de stock]

  • 1 pcs$0.01419
  • 10,000 pcs$0.01412
  • 30,000 pcs$0.01329
  • 50,000 pcs$0.01246
  • 100,000 pcs$0.01107

Número de peza:
1SS427,L3M
Fabricante:
Toshiba Semiconductor and Storage
Descrición detallada:
DIODE GEN PURP 80V 100MA SOD923. Diodes - General Purpose, Power, Switching 300mA SW DIODE
Prazo de entrega estándar do fabricante:
En stock
Vida útil:
Un ano
Chip De:
Hong Kong
RoHS:
Forma de pago:
Forma de envío:
Categorías familiares:
KEY Components Co, LTD é un distribuidor de compoñentes electrónicos que ofrece categorías de produtos, incluíndo: Diodos - RF, Transistores - Bipolar (BJT) - Único, pre-sesgado, Tiristores: DIACs, SIDACs, Diodos - Capacitancia variable (Varicaps, Varactor, Transistores - FETs, MOSFETs - RF, Transistores - Bipolar (BJT) - Arrays, Transistores - Unión programable and Transistores - IGBTs - Módulos ...
Ventaxa competitiva:
We specialize in Toshiba Semiconductor and Storage 1SS427,L3M electronic components. 1SS427,L3M can be shipped within 24 hours after order. If you have any demands for 1SS427,L3M, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1SS427,L3M Atributos do produto

Número de peza : 1SS427,L3M
Fabricante : Toshiba Semiconductor and Storage
Descrición : DIODE GEN PURP 80V 100MA SOD923
Serie : -
Estado da parte : Active
Tipo de diodo : Standard
Tensión - Inversión CC (Vr) (Max) : 80V
Actual - Media rectificada (Io) : 100mA
Tensión - Adiante (Vf) (Máx.) @ Se : 1.2V @ 100mA
Velocidade : Small Signal =< 200mA (Io), Any Speed
Tempo de recuperación inversa (trr) : 1.6ns
Actual - Fuga inversa @ Vr : 500nA @ 80V
Capacitancia @ Vr, F : 0.3pF @ 0V, 1MHz
Tipo de montaxe : Surface Mount
Paquete / Estuche : SOD-923
Paquete de dispositivos de provedores : SOD-923
Temperatura de funcionamento: unión : -55°C ~ 150°C

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