1N4150W-HE3-08 Prezos (USD) [2033073unidades de stock]
- 1 pcs$0.01920
- 3,000 pcs$0.01910
- 6,000 pcs$0.01661
- 15,000 pcs$0.01412
- 30,000 pcs$0.01329
- 75,000 pcs$0.01246
- 150,000 pcs$0.01107
- Número de peza:
- 1N4150W-HE3-08
- Fabricante:
- Vishay Semiconductor Diodes Division
- Descrición detallada:
- DIODE GEN PURP 50V 200MA SOD123. Diodes - General Purpose, Power, Switching 50 Volt 500mA 4ns
- Prazo de entrega estándar do fabricante:
- En stock
- Vida útil:
- Un ano
- Chip De:
- Hong Kong
- RoHS:
- Forma de pago:
-
- Forma de envío:
- Categorías familiares:
- KEY Components Co, LTD é un distribuidor de compoñentes electrónicos que ofrece categorías de produtos, incluíndo: Transistores - Bipolar (BJT) - Individual, Módulos de controlador de enerxía, Transistores - Finalidade especial, Transistores - IGBTs - Arrays, Transistores - Bipolar (BJT) - RF, Diodos: rectificadores de ponte, Transistores - FETs, MOSFETs - RF and Diodos - Zener - Arrays ...
- Ventaxa competitiva:
- We specialize in Vishay Semiconductor Diodes Division 1N4150W-HE3-08 electronic components. 1N4150W-HE3-08 can be shipped within 24 hours after order. If you have any demands for 1N4150W-HE3-08, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
1N4150W-HE3-08 Atributos do produto
Número de peza :
1N4150W-HE3-08
Fabricante :
Vishay Semiconductor Diodes Division
Descrición :
DIODE GEN PURP 50V 200MA SOD123
Serie :
-
Estado da parte :
Active
Tipo de diodo :
Standard
Tensión - Inversión CC (Vr) (Max) :
50V
Actual - Media rectificada (Io) :
200mA
Tensión - Adiante (Vf) (Máx.) @ Se :
1V @ 200mA
Velocidade :
Small Signal =< 200mA (Io), Any Speed
Tempo de recuperación inversa (trr) :
4ns
Actual - Fuga inversa @ Vr :
100nA @ 50V
Capacitancia @ Vr, F :
2.5pF @ 0V, 1MHz
Tipo de montaxe :
Surface Mount
Paquete / Estuche :
SOD-123
Paquete de dispositivos de provedores :
SOD-123
Temperatura de funcionamento: unión :
-55°C ~ 150°C
Últimas novas
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