Vishay Semiconductor Diodes Division - B125C800G-E4/51

KEY Part #: K6539912

B125C800G-E4/51 Prezos (USD) [308641unidades de stock]

  • 1 pcs$0.11984
  • 3,000 pcs$0.09916

Número de peza:
B125C800G-E4/51
Fabricante:
Vishay Semiconductor Diodes Division
Descrición detallada:
BRIDGE RECT 1P 200V 900MA WOG. Bridge Rectifiers 0.9 Amp 200 Volt
Prazo de entrega estándar do fabricante:
En stock
Vida útil:
Un ano
Chip De:
Hong Kong
RoHS:
Forma de pago:
Forma de envío:
Categorías familiares:
KEY Components Co, LTD é un distribuidor de compoñentes electrónicos que ofrece categorías de produtos, incluíndo: Transistores - Unión programable, Transistores - Bipolar (BJT) - Arrays, previos, Módulos de controlador de enerxía, Tiristores - SCRs - Módulos, Transistores - FETs, MOSFETs - Single, Tiristores: SCRs, Transistores - Bipolar (BJT) - RF and Diodos - Zener - Single ...
Ventaxa competitiva:
We specialize in Vishay Semiconductor Diodes Division B125C800G-E4/51 electronic components. B125C800G-E4/51 can be shipped within 24 hours after order. If you have any demands for B125C800G-E4/51, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

B125C800G-E4/51 Atributos do produto

Número de peza : B125C800G-E4/51
Fabricante : Vishay Semiconductor Diodes Division
Descrición : BRIDGE RECT 1P 200V 900MA WOG
Serie : -
Estado da parte : Active
Tipo de diodo : Single Phase
Tecnoloxía : Standard
Tensión - Pico inverso (máximo) : 200V
Actual - Media rectificada (Io) : 900mA
Tensión - Adiante (Vf) (Máx.) @ Se : 1V @ 900mA
Actual - Fuga inversa @ Vr : 10µA @ 200V
Temperatura de operación : -40°C ~ 125°C (TJ)
Tipo de montaxe : Through Hole
Paquete / Estuche : 4-Circular, WOG
Paquete de dispositivos de provedores : WOG

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