Vishay Semiconductor Diodes Division - 1N4151WS-G3-18

KEY Part #: K6440048

1N4151WS-G3-18 Prezos (USD) [2243257unidades de stock]

  • 1 pcs$0.01649
  • 10,000 pcs$0.01525

Número de peza:
1N4151WS-G3-18
Fabricante:
Vishay Semiconductor Diodes Division
Descrición detallada:
DIODE GEN PURP 50V 150MA SOD323. Diodes - General Purpose, Power, Switching 75 Volt 500mA 2ns
Prazo de entrega estándar do fabricante:
En stock
Vida útil:
Un ano
Chip De:
Hong Kong
RoHS:
Forma de pago:
Forma de envío:
Categorías familiares:
KEY Components Co, LTD é un distribuidor de compoñentes electrónicos que ofrece categorías de produtos, incluíndo: Transistores - FETs, MOSFETs - Single, Tiristores: SCRs, Tiristores: TRIAC, Diodos - Capacitancia variable (Varicaps, Varactor, Transistores - IGBTs - Arrays, Transistores - Bipolar (BJT) - Individual, Transistores - Finalidade especial and Diodos: rectificadores de ponte ...
Ventaxa competitiva:
We specialize in Vishay Semiconductor Diodes Division 1N4151WS-G3-18 electronic components. 1N4151WS-G3-18 can be shipped within 24 hours after order. If you have any demands for 1N4151WS-G3-18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N4151WS-G3-18 Atributos do produto

Número de peza : 1N4151WS-G3-18
Fabricante : Vishay Semiconductor Diodes Division
Descrición : DIODE GEN PURP 50V 150MA SOD323
Serie : -
Estado da parte : Active
Tipo de diodo : Standard
Tensión - Inversión CC (Vr) (Max) : 50V
Actual - Media rectificada (Io) : 150mA
Tensión - Adiante (Vf) (Máx.) @ Se : 1V @ 50mA
Velocidade : Small Signal =< 200mA (Io), Any Speed
Tempo de recuperación inversa (trr) : 4ns
Actual - Fuga inversa @ Vr : 50nA @ 50V
Capacitancia @ Vr, F : -
Tipo de montaxe : Surface Mount
Paquete / Estuche : SC-76, SOD-323
Paquete de dispositivos de provedores : SOD-323
Temperatura de funcionamento: unión : -55°C ~ 150°C

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