Toshiba Semiconductor and Storage - TBAV99,LM

KEY Part #: K6470011

TBAV99,LM Prezos (USD) [2710765unidades de stock]

  • 1 pcs$0.01440
  • 3,000 pcs$0.01433
  • 6,000 pcs$0.01246
  • 15,000 pcs$0.01059
  • 30,000 pcs$0.00997
  • 75,000 pcs$0.00935
  • 150,000 pcs$0.00831

Número de peza:
TBAV99,LM
Fabricante:
Toshiba Semiconductor and Storage
Descrición detallada:
DIODE ARRAY GP 80V 100MA SOT23-3. Diodes - General Purpose, Power, Switching High Speed Switching Diode
Prazo de entrega estándar do fabricante:
En stock
Vida útil:
Un ano
Chip De:
Hong Kong
RoHS:
Forma de pago:
Forma de envío:
Categorías familiares:
KEY Components Co, LTD é un distribuidor de compoñentes electrónicos que ofrece categorías de produtos, incluíndo: Tiristores: TRIAC, Transistores - FETs, MOSFETs - Arrays, Transistores - Unión programable, Transistores - IGBTs - Módulos, Transistores - JFETs, Transistores - IGBTs - Arrays, Transistores - Bipolar (BJT) - Individual and Tiristores: SCRs ...
Ventaxa competitiva:
We specialize in Toshiba Semiconductor and Storage TBAV99,LM electronic components. TBAV99,LM can be shipped within 24 hours after order. If you have any demands for TBAV99,LM, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TBAV99,LM Atributos do produto

Número de peza : TBAV99,LM
Fabricante : Toshiba Semiconductor and Storage
Descrición : DIODE ARRAY GP 80V 100MA SOT23-3
Serie : -
Estado da parte : Active
Configuración do diodo : 1 Pair Series Connection
Tipo de diodo : Standard
Tensión - Inversión CC (Vr) (Max) : 80V
Actual - Media rectificada (Io) (por diodo) : 100mA
Tensión - Adiante (Vf) (Máx.) @ Se : 1.25V @ 150mA
Velocidade : Small Signal =< 200mA (Io), Any Speed
Tempo de recuperación inversa (trr) : 4ns
Actual - Fuga inversa @ Vr : 500nA @ 80V
Temperatura de funcionamento: unión : 125°C (Max)
Tipo de montaxe : Surface Mount
Paquete / Estuche : TO-236-3, SC-59, SOT-23-3
Paquete de dispositivos de provedores : SOT-23-3

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