BAV19W-HE3-18 Prezos (USD) [2489257unidades de stock]
- 1 pcs$0.01568
- 10,000 pcs$0.01560
- Número de peza:
- BAV19W-HE3-18
- Fabricante:
- Vishay Semiconductor Diodes Division
- Descrición detallada:
- DIODE GEN PURP 100V 250MA SOD123. Diodes - General Purpose, Power, Switching 120V 625mA 1A IFSM
- Prazo de entrega estándar do fabricante:
- En stock
- Vida útil:
- Un ano
- Chip De:
- Hong Kong
- RoHS:
- Forma de pago:
-
- Forma de envío:
- Categorías familiares:
- KEY Components Co, LTD é un distribuidor de compoñentes electrónicos que ofrece categorías de produtos, incluíndo: Transistores - FETs, MOSFETs - Single, Diodos - Rectificadores - Solteiros, Transistores - Unión programable, Diodos: rectificadores de ponte, Módulos de controlador de enerxía, Diodos - Zener - Arrays, Transistores - FETs, MOSFETs - RF and Tiristores - SCRs - Módulos ...
- Ventaxa competitiva:
- We specialize in Vishay Semiconductor Diodes Division BAV19W-HE3-18 electronic components. BAV19W-HE3-18 can be shipped within 24 hours after order. If you have any demands for BAV19W-HE3-18, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BAV19W-HE3-18 Atributos do produto
Número de peza :
BAV19W-HE3-18
Fabricante :
Vishay Semiconductor Diodes Division
Descrición :
DIODE GEN PURP 100V 250MA SOD123
Serie :
Automotive, AEC-Q101
Estado da parte :
Active
Tipo de diodo :
Standard
Tensión - Inversión CC (Vr) (Max) :
100V
Actual - Media rectificada (Io) :
250mA (DC)
Tensión - Adiante (Vf) (Máx.) @ Se :
1.25V @ 200mA
Velocidade :
Fast Recovery =< 500ns, > 200mA (Io)
Tempo de recuperación inversa (trr) :
50ns
Actual - Fuga inversa @ Vr :
100nA @ 100V
Capacitancia @ Vr, F :
1.5pF @ 0V, 1MHz
Tipo de montaxe :
Surface Mount
Paquete / Estuche :
SOD-123
Paquete de dispositivos de provedores :
SOD-123
Temperatura de funcionamento: unión :
150°C (Max)
Últimas novas
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