HN1D03FU,LF Prezos (USD) [1416991unidades de stock]
- 1 pcs$0.02755
- 3,000 pcs$0.02741
- 6,000 pcs$0.02467
- 15,000 pcs$0.02193
- 30,000 pcs$0.02056
- 75,000 pcs$0.01827
- Número de peza:
- HN1D03FU,LF
- Fabricante:
- Toshiba Semiconductor and Storage
- Descrición detallada:
- DIODE ARRAY GP 80V 80MA US6. Diodes - General Purpose, Power, Switching High Speed Switching Diode
- Prazo de entrega estándar do fabricante:
- En stock
- Vida útil:
- Un ano
- Chip De:
- Hong Kong
- RoHS:
- Forma de pago:
-
- Forma de envío:
- Categorías familiares:
- KEY Components Co, LTD é un distribuidor de compoñentes electrónicos que ofrece categorías de produtos, incluíndo: Transistores - IGBTs - Módulos, Transistores - IGBTs - Arrays, Módulos de controlador de enerxía, Diodos - Rectificadores - Arrays, Transistores - FETs, MOSFETs - Arrays, Transistores - Bipolar (BJT) - Arrays, previos, Tiristores: TRIAC and Transistores - JFETs ...
- Ventaxa competitiva:
- We specialize in Toshiba Semiconductor and Storage HN1D03FU,LF electronic components. HN1D03FU,LF can be shipped within 24 hours after order. If you have any demands for HN1D03FU,LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HN1D03FU,LF Atributos do produto
Número de peza :
HN1D03FU,LF
Fabricante :
Toshiba Semiconductor and Storage
Descrición :
DIODE ARRAY GP 80V 80MA US6
Serie :
-
Estado da parte :
Active
Configuración do diodo :
2 Pair CA + CC
Tipo de diodo :
Standard
Tensión - Inversión CC (Vr) (Max) :
80V
Actual - Media rectificada (Io) (por diodo) :
80mA
Tensión - Adiante (Vf) (Máx.) @ Se :
1.2V @ 100mA
Velocidade :
Small Signal =< 200mA (Io), Any Speed
Tempo de recuperación inversa (trr) :
4ns
Actual - Fuga inversa @ Vr :
500nA @ 80V
Temperatura de funcionamento: unión :
125°C (Max)
Tipo de montaxe :
Surface Mount
Paquete / Estuche :
6-TSSOP, SC-88, SOT-363
Paquete de dispositivos de provedores :
US6
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