1SS387CT,L3F Prezos (USD) [3056256unidades de stock]
- 1 pcs$0.01277
- 10,000 pcs$0.01271
- 30,000 pcs$0.01196
- 50,000 pcs$0.01121
- 100,000 pcs$0.00997
- Número de peza:
- 1SS387CT,L3F
- Fabricante:
- Toshiba Semiconductor and Storage
- Descrición detallada:
- DIODE GEN PURP 80V 100MA CST2. Diodes - General Purpose, Power, Switching Switching Diode 80V 100MA CST2
- Prazo de entrega estándar do fabricante:
- En stock
- Vida útil:
- Un ano
- Chip De:
- Hong Kong
- RoHS:
- Forma de pago:
-
- Forma de envío:
- Categorías familiares:
- KEY Components Co, LTD é un distribuidor de compoñentes electrónicos que ofrece categorías de produtos, incluíndo: Diodos - Zener - Single, Diodos - Rectificadores - Solteiros, Transistores - Bipolar (BJT) - Único, pre-sesgado, Transistores - FETs, MOSFETs - Single, Tiristores: DIACs, SIDACs, Transistores - FETs, MOSFETs - RF, Transistores - Bipolar (BJT) - Arrays and Transistores - Bipolar (BJT) - RF ...
- Ventaxa competitiva:
- We specialize in Toshiba Semiconductor and Storage 1SS387CT,L3F electronic components. 1SS387CT,L3F can be shipped within 24 hours after order. If you have any demands for 1SS387CT,L3F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
1SS387CT,L3F Atributos do produto
Número de peza :
1SS387CT,L3F
Fabricante :
Toshiba Semiconductor and Storage
Descrición :
DIODE GEN PURP 80V 100MA CST2
Serie :
-
Estado da parte :
Active
Tipo de diodo :
Standard
Tensión - Inversión CC (Vr) (Max) :
80V
Actual - Media rectificada (Io) :
100mA
Tensión - Adiante (Vf) (Máx.) @ Se :
1.2V @ 100mA
Velocidade :
Small Signal =< 200mA (Io), Any Speed
Tempo de recuperación inversa (trr) :
1.6ns
Actual - Fuga inversa @ Vr :
500nA @ 80V
Capacitancia @ Vr, F :
0.5pF @ 0V, 1MHz
Tipo de montaxe :
Surface Mount
Paquete / Estuche :
SOD-882
Paquete de dispositivos de provedores :
CST2
Temperatura de funcionamento: unión :
150°C (Max)
Últimas novas
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