Vishay Semiconductor Diodes Division - 1N4151W-HE3-08

KEY Part #: K6439930

1N4151W-HE3-08 Prezos (USD) [2750629unidades de stock]

  • 1 pcs$0.01419
  • 15,000 pcs$0.01412

Número de peza:
1N4151W-HE3-08
Fabricante:
Vishay Semiconductor Diodes Division
Descrición detallada:
DIODE GEN PURP 50V 150MA SOD123. Diodes - General Purpose, Power, Switching 75 Volt 500mA 2ns
Prazo de entrega estándar do fabricante:
En stock
Vida útil:
Un ano
Chip De:
Hong Kong
RoHS:
Forma de pago:
Forma de envío:
Categorías familiares:
KEY Components Co, LTD é un distribuidor de compoñentes electrónicos que ofrece categorías de produtos, incluíndo: Tiristores - SCRs - Módulos, Transistores - FETs, MOSFETs - Arrays, Tiristores: SCRs, Transistores - Bipolar (BJT) - Arrays, Tiristores: DIACs, SIDACs, Transistores - FETs, MOSFETs - RF, Transistores - FETs, MOSFETs - Single and Diodos - Zener - Single ...
Ventaxa competitiva:
We specialize in Vishay Semiconductor Diodes Division 1N4151W-HE3-08 electronic components. 1N4151W-HE3-08 can be shipped within 24 hours after order. If you have any demands for 1N4151W-HE3-08, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N4151W-HE3-08 Atributos do produto

Número de peza : 1N4151W-HE3-08
Fabricante : Vishay Semiconductor Diodes Division
Descrición : DIODE GEN PURP 50V 150MA SOD123
Serie : -
Estado da parte : Active
Tipo de diodo : Standard
Tensión - Inversión CC (Vr) (Max) : 50V
Actual - Media rectificada (Io) : 150mA
Tensión - Adiante (Vf) (Máx.) @ Se : 1V @ 50mA
Velocidade : Small Signal =< 200mA (Io), Any Speed
Tempo de recuperación inversa (trr) : 4ns
Actual - Fuga inversa @ Vr : 50nA @ 50V
Capacitancia @ Vr, F : -
Tipo de montaxe : Surface Mount
Paquete / Estuche : SOD-123
Paquete de dispositivos de provedores : SOD-123
Temperatura de funcionamento: unión : -55°C ~ 150°C

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