Vishay Semiconductor Diodes Division - RGP10M-E3/54

KEY Part #: K6458287

RGP10M-E3/54 Prezos (USD) [1030992unidades de stock]

  • 1 pcs$0.03588
  • 5,500 pcs$0.03318
  • 11,000 pcs$0.03025
  • 27,500 pcs$0.02830
  • 55,000 pcs$0.02602

Número de peza:
RGP10M-E3/54
Fabricante:
Vishay Semiconductor Diodes Division
Descrición detallada:
DIODE GEN PURP 1KV 1A DO204AL. Diodes - General Purpose, Power, Switching 1.0 Amp 1000 Volt
Prazo de entrega estándar do fabricante:
En stock
Vida útil:
Un ano
Chip De:
Hong Kong
RoHS:
Forma de pago:
Forma de envío:
Categorías familiares:
KEY Components Co, LTD é un distribuidor de compoñentes electrónicos que ofrece categorías de produtos, incluíndo: Transistores - FETs, MOSFETs - Arrays, Transistores - JFETs, Transistores - Bipolar (BJT) - RF, Diodos - Zener - Single, Transistores - FETs, MOSFETs - RF, Tiristores - SCRs - Módulos, Transistores - Bipolar (BJT) - Arrays and Transistores - Bipolar (BJT) - Individual ...
Ventaxa competitiva:
We specialize in Vishay Semiconductor Diodes Division RGP10M-E3/54 electronic components. RGP10M-E3/54 can be shipped within 24 hours after order. If you have any demands for RGP10M-E3/54, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RGP10M-E3/54 Atributos do produto

Número de peza : RGP10M-E3/54
Fabricante : Vishay Semiconductor Diodes Division
Descrición : DIODE GEN PURP 1KV 1A DO204AL
Serie : SUPERECTIFIER®
Estado da parte : Active
Tipo de diodo : Standard
Tensión - Inversión CC (Vr) (Max) : 1000V
Actual - Media rectificada (Io) : 1A
Tensión - Adiante (Vf) (Máx.) @ Se : 1.3V @ 1A
Velocidade : Fast Recovery =< 500ns, > 200mA (Io)
Tempo de recuperación inversa (trr) : 500ns
Actual - Fuga inversa @ Vr : 5µA @ 1000V
Capacitancia @ Vr, F : 15pF @ 4V, 1MHz
Tipo de montaxe : Through Hole
Paquete / Estuche : DO-204AL, DO-41, Axial
Paquete de dispositivos de provedores : DO-204AL (DO-41)
Temperatura de funcionamento: unión : -65°C ~ 175°C

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