1N4448WS-E3-18 Prezos (USD) [2895399unidades de stock]
- 1 pcs$0.01348
- 10,000 pcs$0.01342
- Número de peza:
- 1N4448WS-E3-18
- Fabricante:
- Vishay Semiconductor Diodes Division
- Descrición detallada:
- DIODE GEN PURP 75V 150MA SOD323. Diodes - General Purpose, Power, Switching 100 Volt 150mA 4ns 500mA IFSM
- Prazo de entrega estándar do fabricante:
- En stock
- Vida útil:
- Un ano
- Chip De:
- Hong Kong
- RoHS:
- Forma de pago:
-
- Forma de envío:
- Categorías familiares:
- KEY Components Co, LTD é un distribuidor de compoñentes electrónicos que ofrece categorías de produtos, incluíndo: Tiristores: SCRs, Transistores - Bipolar (BJT) - Arrays, previos, Transistores - Bipolar (BJT) - RF, Tiristores: TRIAC, Transistores - FETs, MOSFETs - Arrays, Transistores - IGBTs - Single, Transistores - Bipolar (BJT) - Arrays and Transistores - JFETs ...
- Ventaxa competitiva:
- We specialize in Vishay Semiconductor Diodes Division 1N4448WS-E3-18 electronic components. 1N4448WS-E3-18 can be shipped within 24 hours after order. If you have any demands for 1N4448WS-E3-18, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
1N4448WS-E3-18 Atributos do produto
Número de peza :
1N4448WS-E3-18
Fabricante :
Vishay Semiconductor Diodes Division
Descrición :
DIODE GEN PURP 75V 150MA SOD323
Serie :
-
Estado da parte :
Active
Tipo de diodo :
Standard
Tensión - Inversión CC (Vr) (Max) :
75V
Actual - Media rectificada (Io) :
150mA
Tensión - Adiante (Vf) (Máx.) @ Se :
720mV @ 5mA
Velocidade :
Small Signal =< 200mA (Io), Any Speed
Tempo de recuperación inversa (trr) :
4ns
Actual - Fuga inversa @ Vr :
5µA @ 75V
Capacitancia @ Vr, F :
-
Tipo de montaxe :
Surface Mount
Paquete / Estuche :
SC-76, SOD-323
Paquete de dispositivos de provedores :
SOD-323
Temperatura de funcionamento: unión :
-55°C ~ 150°C
Últimas novas
Tamén pode estar interesado
-
BAS19
ON Semiconductor
DIODE GEN PURP 120V 200MA SOT23. Diodes - General Purpose, Power, Switching 120V 200mA
-
MMBD4448
ON Semiconductor
DIODE GEN PURP 75V 200MA SOT23-3. Diodes - General Purpose, Power, Switching Hi Conductance Fast
-
MMBD1501A
ON Semiconductor
DIODE GEN PURP 200V 200MA SOT23. Diodes - General Purpose, Power, Switching High Voltage General Purpose
-
BAS29
ON Semiconductor
DIODE GEN PURP 120V 200MA SOT23. Diodes - General Purpose, Power, Switching 120V 200mA
-
BAV20W-E3-18
Vishay Semiconductor Diodes Division
DIODE GEN PURP 150V 250MA SOD123. Diodes - General Purpose, Power, Switching 200V 625mA 1A IFSM
-
1N4148W-HE3-18
Vishay Semiconductor Diodes Division
DIODE GEN PURP 75V 150MA SOD123. Diodes - General Purpose, Power, Switching 100 Volt 500mA 4ns
Pezas quentes
- IDD12SG60CXTMA2
- S1MFL RVG
- RGP10J-5025M3/73
- JAN1N1190
- R4260F
- R9G22011ASOO
- MURS120HE3/52T
- IDW12G65C5FKSA1
- SB040-E3/54
- NSRM30CM3T5G
- AR3PJHM3/86A
- VS-60CPF02PBF
- VS-150SQ035
- RGP02-14E-M3/73
- RS1GHE3/5AT
- RGP5020HE3/54
- SB160A-E3/73
- GP15KHE3/73
- 1N4937L-T
- MR7510-BP
- JAN1N6629US
- STTH40P03SFP
- BAS29_D87Z
- D4015L
- VS-12TQ040PBF
- SS16T3
- MBRB745
- RS3G-13
- 20ETS12S
- 1PS59SB20,115
- MBRM120ET1H
- ER1D-TP
- 1N4935-TP
- MUR110-AP
- STPS2H100UF
- RU 2V1
- SK56C M6G
- ESH2CHE3_A/I
- BA159GPE-E3/73
- LL4448-GS08