NSB8KTHE3_A/I Prezos (USD) [104538unidades de stock]
- 1 pcs$0.37403
- 800 pcs$0.33139
- Número de peza:
- NSB8KTHE3_A/I
- Fabricante:
- Vishay Semiconductor Diodes Division
- Descrición detallada:
- DIODE GEN PURP 800V 8A TO263AB. Rectifiers 8A 800V Glass Psvtd AEC-Q101 Qualified
- Prazo de entrega estándar do fabricante:
- En stock
- Vida útil:
- Un ano
- Chip De:
- Hong Kong
- RoHS:
- Forma de pago:
-
- Forma de envío:
- Categorías familiares:
- KEY Components Co, LTD é un distribuidor de compoñentes electrónicos que ofrece categorías de produtos, incluíndo: Tiristores: TRIAC, Transistores - FETs, MOSFETs - RF, Transistores - Bipolar (BJT) - Individual, Transistores - Bipolar (BJT) - RF, Transistores - FETs, MOSFETs - Arrays, Transistores - FETs, MOSFETs - Single, Tiristores: DIACs, SIDACs and Diodos - RF ...
- Ventaxa competitiva:
- We specialize in Vishay Semiconductor Diodes Division NSB8KTHE3_A/I electronic components. NSB8KTHE3_A/I can be shipped within 24 hours after order. If you have any demands for NSB8KTHE3_A/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NSB8KTHE3_A/I Atributos do produto
Número de peza :
NSB8KTHE3_A/I
Fabricante :
Vishay Semiconductor Diodes Division
Descrición :
DIODE GEN PURP 800V 8A TO263AB
Serie :
Automotive, AEC-Q101
Estado da parte :
Active
Tipo de diodo :
Standard
Tensión - Inversión CC (Vr) (Max) :
800V
Actual - Media rectificada (Io) :
8A
Tensión - Adiante (Vf) (Máx.) @ Se :
1.1V @ 8A
Velocidade :
Standard Recovery >500ns, > 200mA (Io)
Tempo de recuperación inversa (trr) :
-
Actual - Fuga inversa @ Vr :
10µA @ 800V
Capacitancia @ Vr, F :
55pF @ 4V, 1MHz
Tipo de montaxe :
Surface Mount
Paquete / Estuche :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Paquete de dispositivos de provedores :
TO-263AB
Temperatura de funcionamento: unión :
-55°C ~ 150°C
Últimas novas
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NSB8KTHE3_A/I
Vishay Semiconductor Diodes Division
DIODE GEN PURP 800V 8A TO263AB. Rectifiers 8A 800V Glass Psvtd AEC-Q101 Qualified
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