DDR3


Imaxe CLAVE N.º de parte / Fabricante Descrición / PDF Cantidade / RFQ
K4B4G0846D-BMK0

K4B4G0846D-BMK0

Samsung Semiconductor

4 Gb 512M x 8 1600 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production.

18176unidades de stock

K4B4G0846D-BMMA

K4B4G0846D-BMMA

Samsung Semiconductor

4 Gb 512M x 8 1600 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production.

14615unidades de stock

K4B4G0846D-BYH9

K4B4G0846D-BYH9

Samsung Semiconductor

4 Gb 512M x 8 1333 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.

17624unidades de stock

K4B4G0846D-BYK0

K4B4G0846D-BYK0

Samsung Semiconductor

4 Gb 512M x 8 1600 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.

17080unidades de stock

K4B4G0846D-BYMA

K4B4G0846D-BYMA

Samsung Semiconductor

4 Gb 512M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.

18490unidades de stock

K4B4G0846D-BYNB

K4B4G0846D-BYNB

Samsung Semiconductor

4 Gb 512M x 8 2133 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.

27150unidades de stock

K4B4G0846E-BCK0

K4B4G0846E-BCK0

Samsung Semiconductor

4 Gb 512M x 8 1600 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production.

26869unidades de stock

K4B4G0846E-BCMA

K4B4G0846E-BCMA

Samsung Semiconductor

4 Gb 512M x 8 1866 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production.

25726unidades de stock

K4B4G0846E-BMK0

K4B4G0846E-BMK0

Samsung Semiconductor

4 Gb 512M x 8 1600 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production.

20829unidades de stock

K4B4G0846E-BMMA

K4B4G0846E-BMMA

Samsung Semiconductor

4 Gb 512M x 8 1600 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production.

26040unidades de stock

K4B4G0846E-BYK0

K4B4G0846E-BYK0

Samsung Semiconductor

4 Gb 512M x 8 1600 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.

14296unidades de stock

K4B4G0846E-BYMA

K4B4G0846E-BYMA

Samsung Semiconductor

4 Gb 512M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.

18678unidades de stock

K4B4G0846E-YCK0

K4B4G0846E-YCK0

Samsung Semiconductor

4 Gb 512M x 8 1600 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.

23312unidades de stock

K4B4G0846E-YCMA

K4B4G0846E-YCMA

Samsung Semiconductor

4 Gb 512M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.

20224unidades de stock

K4B4G0846R-BFMA

K4B4G0846R-BFMA

Samsung Semiconductor

4 Gb 512M x 8 1866 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production.

17141unidades de stock

K4B4G0846R-BHMA

K4B4G0846R-BHMA

Samsung Semiconductor

4 Gb 512M x 8 1866 Mbps 1.35 V -40 ~ 105 °C 78FBGA Mass Production.

24090unidades de stock

K4B4G1646D-BCH9

K4B4G1646D-BCH9

Samsung Semiconductor

4 Gb 256M x 16 1333 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production.

15623unidades de stock

K4B4G1646D-BCK0

K4B4G1646D-BCK0

Samsung Semiconductor

4 Gb 256M x 16 1600 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production.

18022unidades de stock

K4B4G1646D-BCMA

K4B4G1646D-BCMA

Samsung Semiconductor

4 Gb 256M x 16 1866 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production.

16063unidades de stock

K4B4G1646D-BCNB

K4B4G1646D-BCNB

Samsung Semiconductor

4 Gb 256M x 16 2133 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production.

25323unidades de stock

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